Development of an analytical model of work function modulated GAA MOSFET for electrostatic performance analysis

Abstract

Abstract This paper describes a continuous and almost linearly modulated work-function adjustment between 4.8–4.2eV using Hf-Mo binary alloy. The work-function modulated (WM) metal gate is applied to a gate all around MOSFET (GAA) for better electrostatic control. The threshold voltage is tuned by linearly modulating the gate metal work function. The threshold voltage extracted for dual-GAA MOSFET is initially 0.705 V. However, introducing work-function modulation, the threshold voltage is shifted to 0.620 V for WMGAA and 0.632 V for dual-WMGAA MOSFET. The simulation results validate the benefits of using work-function modulated metal gate in place of normal metal gate in terms of electron mobility, threshold voltage (Vth), and drain current (Id). An improved device performance with reduced short channel effect shows the capability of this device for various circuit applications.