High performance metal-semiconductor-metal ultraviolet photodetector based on mixed-dimensional TiO2/CsPbBr3 heterostructures

Abstract

Abstract Zero-dimensional (0D) and one-dimensional (1D) mixed heterostructure semiconductors can bring superior electrical and optoelectronic performances due to the synergistic advantages of different dimensionalities. Here, a metal-semiconductor–metal (MSM) ultraviolet (UV) photodetector based on 1D-0D TiO2/CsPbBr3 heterostructure semiconductor is constructed, which exhibits excellent photodetection performance. A back-to-back Schottky contact is formed in the MSM (Au/TiO2/Au) structure due to the large band-energy bending resulted from the abundant surface-states at 1D-TiO2 surface. Under an applied voltage, a small saturation current flows through the device. Benefiting from the decoration of CsPbBr3 QDs, the dark current of MSM photodetectors can be further suppressed, and producing the improved on/off ratio (I light/I dark), photoresponsivity (R λ ), and detectivity (D*). PL properties study suggested that an energy transfer is occurred between the 0D-CsPbBr3 and 1D-TiO2. The TiO2/CsPbBr3 heterojunctions are beneficial for photo-induced charge transfer in hetero-interface because of the type-II energy-band alignment, but not non-radiative energy transfer from 0D-CsPbBr3 to 1D-TiO2. On the whole, this study depicts a fascinating coupling architecture of mixed-dimensional materials toward implementing low-cost and high-performance optoelectronic devices.