Photo sensing analysis of T-shape TFET sensor under visible range of spectrum

Abstract

Abstract This paper presents the optical performance of T-shape TFET based photo sensor under visible range of spectrum using a technology computer-aided design (TCAD) Synopsys simulator. The optical analysis of a photo device results in enhancement of spectral sensitivity (Sn), Signal to noise ratio (SNR), Responsivity (R), recombination rate, drain current, and optical generation rate. The result reveals that device under illumination reports magnitude of SNR are 67.79, 47.38, and 38.3 dB at λ= 300, 500, and 700 nm, respectively. The primary objective for investigating the optical operation of TFET is to detect Sn at low gate voltage and make it suitable for low power optical applications in the visible range of spectrum. Finally, a comparison table is introduced to compare the sensitivity of proposed TFET based photo sensor with the existing FET based sensor. TFET based photo sensors have found widespread applications in electronic devices such as wearable bands, smart watches, and IoT appliances, where power efficiency is critical.