Novel efficient and scalable design of full-adder in atomic silicon dangling bonds (ASDB) technology

Abstract

Abstract Atomic Silicon Dangling Bonds (ASDB) is an advanced emerging nanotechnology to replace CMOS technology; because it allows the designing of circuits with very high-speed and low-density. However, one of the most critical challenges in implementing circuits in ASDB nanotechnology is output stability and possible defects, such as DB omission, DB misalignment, and DB extra deposition, which can be overcome using a suitable designing pattern. Therefore, developing stable and robust structures is considered as one of essential topics in ASDB. This paper first proposes two novel and stable computing circuits, including a three-input majority voter (MV3) and three-input XOR (XOR3); based on triangular and rhombus patterns, respectively. Then, an efficient ASDB full-adder is designed using the suggested MV3 and XOR3 gates. Finally, two and four-bit ripple carry adders are developed using proposed full-adder. Simulation results indicate that the suggested MV3 and XOR3 are superior to previous designs, by more than 80%, 48%, and 9.5%, averagely; in terms of occupied area, energy, and occurrence, respectively. Moreover, the proposed gates are investigated against possible defects, and the results show high stability.