Abstract
Abstract
The present work elucidates the significant alterations in several physical characteristics of thermally evaporated TiPcCl2 thin films resulting from vacuum annealing at 373 and 473 K. The structure, surface morphologies, and molecular structure of TiPcCl2 thin films were studied using x-ray Diffraction (XRD), Transmission Electron Microscope (TEM), Field-Emission Scanning Electron Microscope (FESEM), and Fourier Transform Infrared (FT-IR). Results confirmed nanostructure attributes of as-deposited and annealed films, as well as the phase transition in TiPcCl2 was observed during annealing. The optical constants of as-deposited and annealed films in the wavelength range of 200–2500 nm were determined using spectrophotometric techniques. The indirect optical energy gap was observed to diminish with increasing annealing temperature due to enhanced crystallinity of thin films. Using the single oscillator model, the dispersion of the refractive index at normal dispersion was investigated. The third-order nonlinear susceptibility, χ(3), the nonlinear refractive index n2 and the nonlinear absorption coefficient, βc, were calculated and then discussed for both the as-deposited and annealed films. The electrical conductivity of TiPcCl2 exhibited increased as the temperature increased, suggesting its characteristic as a conventional organic semiconductor. The parameters of Mott’s model were obtained and discussed under low-temperature conditions afterward. Conclusions derived from this research indicate that the unique properties of vacuum annealing TiPcCl2 have great promise for future use in optoelectronic systems.
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics