The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer
Author:
Funder
Süleyman Demirel Üniversitesi
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
https://iopscience.iop.org/article/10.1088/1402-4896/abc03a/pdf
Reference39 articles.
1. Capacitance roll-off and frequency-dispersion capacitance-conductance phenomena in field plate and guard ring edge-terminated Ni/SiO2 /4H-nSiC Schottky barrier diodes
2. Electrical and frequency dependence characteristics of Ti/polyethylene oxide (PEO)/p-type InP organic-inorganic Schottky junction
3. On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)
4. Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current–voltage and admittance–voltage characteristics
5. The interface states analysis of the MIS structure as a function of frequency
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1. The role of non-homogeneous barrier on the electrical performance of 15R–SiC Schottky diodes grown by in-situ RF sputtering;Materials Science in Semiconductor Processing;2022-10
2. Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range;Silicon;2022-01-10
3. Electronic and optoelectronic characteristics of Al/MnSe2/p-Si/Al diode;Journal of Molecular Structure;2021-12
4. Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode;Journal of Electronic Materials;2021-10-18
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