Generation of pure spin-valley beams at controllable angles by gate voltage in monolayer molybdenum disulfide

Abstract

Abstract Strong spin–orbit coupling and lack of inversion symmetry in monolayer transition metal dechalcogenides has made these materials as a promising candidate for both spintronic and valleytronic applications. We investigate the effect of adjustable parameters on quantum transmission of electrons through a magnetic barrier on MoS2 monolayer and introduce selection rules for generation of perfectly polarized spin-valley beams in various directions. These selection rules provide an efficient tool for versatile electrical manipulation of spin-valley beams in two-dimensional structures.