Towards multifunctional applications of Fullerene-filled (PVA-PEG) polymeric nanocomposite films: structural, optical, and electrical properties

Abstract

Abstract Via casting method, Polyvinyl alcohol (PVA) and polyethylene glycol (PEG) blend matrix (80/20 wt %) based with fullerene (C60) (i.e., (PVA–PEG)/C60) polymeric nanocomposite (PNC) films have been prepared for optoelectronic devices. The X-ray diffractometer (XRD) and Fourier transform infrared (FTIR) analysis have been used to examine the structural behavior of these PNC films. The absorption coefficient derived from Beer-Lambert’s equation was used to determine energy bandgap (E g ), and Urbach’s energy (E u ) values. The nanocomposite films bandgap was lowered to 4.05 eV for indirect transition and 4.98 eV for direct transition. Because of surface plasmon absorption, the extinction index (k) rises with a doping concentration in nanocomposite films. The connections between bandgap and refractive index (n av ) were investigated using several empirical formulas to arrive at an average value for n. The nonlinear susceptibility χ (3) increased from 1.23 × 10−12 esu to 1.82 × 10−12 esu and from 7.099 × 10−13esu to 8.87 × 10−13 for indirect and direct transition, respectively. The nonlinear refractive index (n 2) increased from 2.146 × 10−11 esu to 3.062 × 10−11 esu and from 1.306 × 10−11esu to 1.59 × 10−11 esu for indirect and direct transition, respectively. The nanocomposites’ optical limiting performance and laser beam absorption capability were examined. Doping PVA–PEG with C60 in these nanocomposites at room temperature has been studied for its impact on complex dielectric permittivity, electric modulus characteristics, and AC electrical conductivity. The dielectric properties reduced with increasing frequency and raised with rising temperature and discussed as evidence of interfacial polarization. AC conductivity levels that varied with temperature followed Arrhenius’s law. According to our findings, the newly developed polymeric nanocomposite films are well-suited for use in electrical and optoelectronic devices.