Abstract
Abstract
A self-powered deep ultraviolet photodetector based on a hybrid Poly(3-hexylthiophene) (P3HT)/β-gallium oxide-(β-Ga2O3) heterojunction with planar structure is presented in this study. The P3HT precursor solution was spin-coating onto the Ga2O3 film grown by metal-organic chemical vapor deposition (MOCVD). The prepared device demonstrates outstanding photoelectric performance with an ultra-low dark current of 0.18 pA, a high responsivity of 57.2 mA W−1, and a detectivity of 1.47 × 1017 Jones under 1 μW cm−2 at 0 V. Benefiting from the formation of the built-in electric field, the photocurrent and response speed have been improved. Furthermore, the physical mechanism of the device under self-powered mode was discussed through an energy band diagram. The device has good stability and repeatability under different light intensities and different voltages. This work provides a simple and effective strategy for designing self-powered ultraviolet photodetectors.
Funder
Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications
Scientific and Technologial Innovation Programs of Higher Education Institutions in Shanxi
Fundamental Research Program of Shanxi Province
National Natural Science Foundation of China
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Cited by
2 articles.
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