Zr vacancies and their complexes with hydrogen in monoclinic zirconia: formation energies and positron lifetimes
Author:
Funder
FEDER (Programa Operacional Factores de Competitividade COMPETE) and FCT Portugal - Funda\c{c}\~{a}o para a Ci\^{e}ncia e Tecnologia
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://iopscience.iop.org/article/10.1088/1402-4896/ab56cd/pdf
Reference59 articles.
1. High dielectric constant gate oxides for metal oxide Si transistors
2. Stable trapping of electrons and holes in deposited insulating oxides: Al2O3, ZrO2, and HfO2
3. Structure and electrical levels of point defects in monoclinic zirconia
4. Point defects in ZrO/sub 2/ high-/spl kappa/ gate oxide
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