Abstract
Abstract
A highly effective method of the device linearity calculation on the stage of the device development is worked out and reported. The method allows expressing the linearity in terms of the achievable spurious-free dynamic range (SFDR) of the created devices, in particular superconductive electronic devices, and therefore can be easy correlated with the obtained experimental data. The algorithm scheme and the method accuracy are considered and discussed in detail.
Funder
Russian Science Foundation