Analog electromagnetic induced transparency of T-type Si-based metamaterial and its applications

Abstract

Abstract A T-type silicon-based metamaterial is proposed, which realizes electromagnetically induced transparency (EIT) by using the asymmetry of its structure. This dielectric metamaterial exhibits an ultranarrow EIT transparent window, with a transmittance of 91% and a Q factor of 180. Measuring its sensing performance, a refractive index sensor with a sensitivity of 466 nm RIU−1 is obtained. In addition, by analyzing the dispersion characteristics of the structure, the maximum group delay value is 2.84 ps, and the corresponding group refractive index is 4250. Therefore, dielectric metamaterials with this structure are expected to be used in refractive index sensing and slow light devices.