Theoretical investigations on electron-impact single-ionization cross section of Sn 11+

Abstract

Abstract The total cross-section of electron-impact single ionization for the ground configuration 3d 104s 24p 64d 3 and excited configuration 3d 104s 24p 64d 24f of Sn 11+ is determined from the ionization threshold to 1000 eV. The contributions of direct ionization, excitation auto-ionization, and resonant excitation double auto-ionization to the total electron-impact single ionization cross-section are systematically demonstrated. The cross-section of direct ionization and excited auto-ionization are determined using the level-to-level method, while the cross-section of partially resonant excited double auto-ionization are determined through the configuration averaged method. To obtain convergence, excitation channels with the maximum principal quantum number up to n = 25 are considered. A comparison of the present results with the experimental data [Borovik et al. J. Phys. B 46, 175 201 (2013)] reveal considerably improved agreement when including the resonant excitation double auto-ionization in the calculation.