Author:
Liguori Antonio,Barten Rebecca,Baruffaldi Filippo,Bergamaschi Anna,Borghi Giacomo,Boscardin Maurizio,Brückner Martin,Butcher Tim Alexander,Carulla Maria,Centis Vignali Matteo,Dinapoli Roberto,Ebner Simon,Ficorella Francesco,Fröjdh Erik,Greiffenberg Dominic,Hammad Ali Omar,Hasanaj Shqipe,Heymes Julian,Hinger Viktoria,King Thomas,Kozlowski Pawel,Lopez-Cuenca Carlos,Mezza Davide,Moustakas Konstantinos,Mozzanica Aldo,Paternoster Giovanni,Paton Kirsty A.,Ronchin Sabina,Ruder Christian,Schmitt Bernd,Thattil Dhanya,Xie Xiangyu,Zhang Jiaguo
Abstract
Abstract
Experiments at synchrotron radiation sources and X-ray
Free-Electron Lasers in the soft X-ray energy range
(250 eV–2 keV) stand to benefit from the adaptation of the
hybrid silicon detector technology for low energy photons. Inverse
Low Gain Avalanche Diode (iLGAD) sensors provide an internal gain,
enhancing the signal-to-noise ratio and allowing single photon
detection below 1 keV using hybrid detectors. In addition, an
optimization of the entrance window of these sensors enhances their
quantum efficiency (QE).
In this work, the QE and the gain of a batch of different iLGAD
diodes with optimized entrance windows were characterized using soft
X-rays at the Surface/Interface:Microscopy beamline of the Swiss
Light Source synchrotron. Above 250 eV, the QE is larger than
55% for all sensor variations, while the charge collection
efficiency is close to 100%. The average gain depends on the
gain layer design of the iLGADs and increases with photon energy. A
fitting procedure is introduced to extract the multiplication factor
as a function of the absorption depth of X-ray photons inside the
sensors. In particular, the multiplication factors for electron- and
hole-triggered avalanches are estimated, corresponding to photon
absorption beyond or before the gain layer, respectively.
Subject
Mathematical Physics,Instrumentation
Cited by
4 articles.
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