Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing-Reference-Cited by-同舟云学术

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Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing

Published:2012-11-05 Issue:11 Volume:7 Page:C11001-C11001
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Franc J,Belas E,Bugár M,Hlídek P,Grill R,Yang G,Cavallini A,Fraboni B,Castaldini A,Assali S

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Reference7 articles.

1. Effect of thermal annealing on the microstructure of CdTe and Cd1−xZnxTe crystals

2. Study of the resistivity mapping in CdTe:Cl-correlation with annealing and Te-precipitates

3. Inclusions Elimination and Resistivity Restoration of CdTe:Cl Crystals by Two-Step Annealing

4. Deep level defects in CdTe materials studied by thermoelectric effect spectroscopy and photo-induced current transient spectroscopy

5. Deep energy levels in CdTe and CdZnTe

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cadmium telluride and cadmium zinc telluride;Single Crystals of Electronic Materials;2019

2. Two-step thermal process in tellurium vapor for tellurium inclusion annealing in high resistivity CdZnTe crystals;Journal of Crystal Growth;2015-04

3. Prismatic punching defects in CdTe compounds;Journal of Crystal Growth;2014-03

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