Abstract
Abstract
The simulation of semiconductor detectors is a key tool for
developping and studying their behavior. In general, simulations of
CZT detectors assume the crystal to be perfect, meaning that its
properties are uniform. However, structural defects appearing in the
crystal during growth modify these properties. Moreover, dynamic
phenomena like polarization can appear. In particular, the electric
field inside the detector can be disturbed by bulk charges, which
creates uncertainties on measurement of incident photon energy and
on interaction position estimated by sub-pixel positioning.
One of the main issues of a simulation considering these
non-uniformities is its complexity, especially if multiple or
evolving electric field distributions have to be considered. Hence,
we have developed a model accepting electric field modifications and
allowing to observe quickly the detector's response modifications
with the electric field. We leveraged GPU to address such
computational burden. Indeed, we can afford to consider more complex
simulations as the computation time is reduced.
In this study, we introduced different types of spatial defects
which may be found in real CZT crystals (point-like, planar, etc.)
to observe quickly and easily their impact on the detector's
measurement, on both spatial and spectral response.
Subject
Mathematical Physics,Instrumentation