Analysis and characterization of CdTe material surface defects

Abstract

Abstract To study the impact of various defects associated close to the surface layer of CdTe material, we use scanning laser Transient Current Technique. This gives us an overview of different compositional inhomogeneities, such as dislocations, grain boundaries, and tellurium inclusions. Particularly, reconstructed high resolution spatial images provide a map of different electrically active defects. Each spatial point contains a recording of a current pulse, from which shape we calculate drift times and total collected charge. Charge mobility and charge loss are extracted from current pulses and show the effects of charge trapping and polarization. In addition, we investigate the impact of the ALD alumina-CdTe interface and negative fixed charge trapping using both passivated and non-passivated CdTe crystals.