The effect of the displacement damage on the Charge Collection Efficiency in Silicon Drift Detectors for the LOFT satellite-Reference-Cited by-同舟云学术

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The effect of the displacement damage on the Charge Collection Efficiency in Silicon Drift Detectors for the LOFT satellite

Published:2015-05-06 Issue:05 Volume:10 Page:P05002-P05002
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Monte E. Del,Evangelista Y.,Bozzo E.,Cadoux F.,Rachevski A.,Zampa G.,Zampa N.,Feroci M.,Pohl M.,Vacchi A.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Link

http://stacks.iop.org/1748-0221/10/i=05/a=P05002/pdf

Reference24 articles.

1. Semiconductor drift chamber — An application of a novel charge transport scheme

2. Review of semiconductor drift detectors

3. Performance of the UA6 large-area silicon drift chamber prototype

4. The Large Observatory for X-ray Timing (LOFT)

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1. HERMES-Pathfinder;Handbook of X-ray and Gamma-ray Astrophysics;2024

2. Silicon Drift Detectors;Handbook of X-ray and Gamma-ray Astrophysics;2024

3. Silicon Drift Detectors;Handbook of X-ray and Gamma-ray Astrophysics;2022-11-29

4. HERMES-Pathfinder;Handbook of X-ray and Gamma-ray Astrophysics;2022

5. Investigation of radiation damage due to particle irradiation on Silicon Drift Detector for Chandrayaan-2 mission;Journal of Instrumentation;2020-01-02

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