Spectrometric properties of semi-insulating GaAs detectors irradiated by 5 MeV electrons at different dose rates-Reference-Cited by-同舟云学术

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Spectrometric properties of semi-insulating GaAs detectors irradiated by 5 MeV electrons at different dose rates

Published:2016-12-28 Issue:12 Volume:11 Page:C12078-C12078
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Šagátová A.,Zaťko B.,Sedlačková K.,Boháček P.,Fülöp M.,Kubanda D.,Nečas V.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Link

http://stacks.iop.org/1748-0221/11/i=12/a=C12078/pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs radiation-degraded detectors: gamma spectrometry at lowered temperatures;Journal of Instrumentation;2022-12-01

2. Semi-insulating GaAs detectors degraded by 8 MeV electrons up to 1500 kGy;Journal of Instrumentation;2021-12-01

3. Alpha-spectrometry by radiation-degraded semi-insulating GaAs detectors;Materials Today: Proceedings;2021-07

4. Gamma spectrometry of different energies by radiation-degraded Si GaAs detectors;APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2021);2021

5. Radiation hardness limits in gamma spectrometry of semi-insulating GaAs detectors irradiated by 5 MeV electrons;Journal of Instrumentation;2020-01-21

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