Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors-Reference-Cited by-同舟云学术

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Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

Published:2016-09-19 Issue:09 Volume:11 Page:P09006-P09006
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Betta G.-F. Dalla,Ayllon N.,Boscardin M.,Hoeferkamp M.,Mattiazzo S.,McDuff H.,Mendicino R.,Povoli M.,Seidel S.,Sultan D.M.S.,Zorzi N.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Link

http://stacks.iop.org/1748-0221/11/i=09/a=P09006/pdf

Reference49 articles.

1. 3D — A proposed new architecture for solid-state radiation detectors

2. Physics potential and experimental challenges of the LHC luminosity upgrade

3. The geometrical dependence of radiation hardness in planar and 3D silicon detectors

4. Silicon detectors with 3-D electrode arrays: fabrication and initial test results

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1. Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs;Sensors;2023-06-06

2. TCAD Analysis of Leakage Current and Breakdown Voltage in Small Pitch 3D Pixel Sensors;Sensors;2023-05-13

3. Quality Control (QC) of FBK preproduction 3D Si sensors for ATLAS HL-LHC Upgrades;Journal of Instrumentation;2022-12-01

4. Progress in 3D Silicon Radiation Detectors;Frontiers in Physics;2022-06-03

5. Electrical characterization of 180 nm ATLASPix2 HV-CMOS monolithic prototypes for the High-Luminosity LHC;Journal of Instrumentation;2020-05-27

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