Recent developments in the IGNITE project on front-end design in CMOS 28-nm technology

Abstract

Abstract The IGNITE project (INFN Ground-up INITiative-on micro-Electronics developments) is developing solutions on integrated micro-systems aimed at the next generation of high-luminosity experiment at the LHC. A test ASIC, designed in CMOS 28-nm technology and named Ignite-0, has been submitted for fabrication. It integrates circuital solutions suitable for pixels with timing having a pitch ranging from 45 to 55 µm. The present paper describes the criteria used in the design choices, and the expected ASIC performance as output from post-layout simulations. Perspectives on subsequent design work on 4D-tracking devices following the Ignite-0 development are also briefly described.