Author:
Vicente Leitao P.,Aglieri Rinella G.,Bugiel S.,Cecconi L.,de Melo J.L.A.,De Robertis G.,Deng W.,Dorda Martin A.,Dorosz P.,Fang X.,Gajanana D.,Gromov V.,Hodges A.,Hong G.H.,Kremastiotis I.,Kugathasan T.,Loddo F.,Marras D.,Matthew S.,Morel F.,Piro F.,Pulli A.,Sedgwick I.,Snoeys W.,Soudier J.,Valin I.,Yelkenci A.
Abstract
Abstract
The MOnolithic Stitched Sensor (MOSS) is a development prototype chip towards the ITS3 vertexing detector for the ALICE experiment at the LHC. Designed using a 65 nm CMOS Imaging technology, it aims at profiting from the stitching technique to construct a single-die monolithic pixel detector of 1.4 cm × 26 cm. The MOSS prototype is one of the prototypes developed within the CERN-EP R&D framework to learn how to make stitched wafer-scale sensors with satisfactory yield. This contribution will describe some of the design challenges of a stitched pixel sensor and the techniques adopted during the development of this prototype.
Subject
Mathematical Physics,Instrumentation
Cited by
4 articles.
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