Author:
Ščajev Patrik,Mekys Algirdas
Abstract
Abstract
A commercial grade low-cost image intensifier was modified
with a fast transistor gating circuit for time-resolved
photoluminescence spectra and decay measurements. Gating exposure of
20 ns and spectral sensitivity in the 300–1000 nm range were
achieved. Operation frequency in 5 Hz to 0.3 MHz range was
verified by a pulsed laser diode. Pulsed repetitive image detection
was integrated on a cooled CMOS camera. High dynamic range and wide
spectral resolution were achieved. The thermal noise, reduced by
three orders of magnitude at -16°C cooling and a high gain of
104, allowed single photon detection. Application of the
spectrometer for sensitive photoluminescence decay measurements at
pulsed laser excitation was performed on MAPbBr3 perovskite and
CsI(Tl) scintillator crystals. The decay lifetimes of 400–600 ns
and 100–6000 ns were determined, respectively. CsI(Tl)
scintillator showed much stronger x-ray luminescence intensity due
to larger defect density.
Subject
Mathematical Physics,Instrumentation
Cited by
1 articles.
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