Author:
Zhu Jianbin,Lin Munan,Li Haibo,Zhang Wenqing,Liu Yuntao,Qi Xin
Abstract
Abstract
Nanosecond pulser is widely used in beam injection and
extraction. Semiconductor Opening Switch (SOS) is a type of high
voltage diode with P+-P-N-N+ semiconductor structure,
which has a great application prospect in pulse power technology for
its notably short switching-off time, high repetition rate and large
working current. The cutoff time of the SOS is dependent on the
duration and amplitude of the pumping current, which may reach
thousands of amperes. A two-stage magnetic compression pumping
circuit without external demagnetization cicuits is proposed to meet
the operational requirements of SOS. The circuit was simulated by
Pspice, which confirmed the principle of the circuit. A prototype of
the pulser was constructed based on the simulation analysis. The
experiments indicated that the reverse pumping current with
amplitude of 460 A and duration of 18 ns, and a 16 kV, duration
of 14 ns pulse was generated on the load of 50 Ω. The
design, simulation and the test results of the nanosecond high
voltage pulser are presented in the paper.
Subject
Mathematical Physics,Instrumentation