First results on monolithic CMOS detector with internal gain

Abstract

Abstract In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 μm. This prototype is formed by a pixel array where each pixel has a total size of 100 μm× 250 μm and includes a high-speed front-end amplifier. After describing the sensor and the electronics architecture, both laboratory and in-beam measurements are reported and described. Optical characterisations performed with an IR pulsed laser setup have shown a sensor internal gain of about 2.5. With the same experimental setup, the electronic jitter was found to be between 50 ps and 150 ps, depending on the signal amplitude. Moreover, the analysis of a test beam performed at the Proton Synchrotron (PS) T10 facility of CERN with 10 GeV/c protons and pions indicated that the overall detector time resolution is in the range of 234 ps to 244 ps. Further TCAD investigations, based on the doping profile extracted from C(V) measurements, confirmed the multiplication gain measured on the test devices. Finally, TCAD simulations were used to tune the future doping concentration of the gain layer implant, targeting sensors with a higher avalanche gain. This adjustment is expected to enhance the timing performance of the sensors of the future productions, in order to cope with the high event rate expected in most of the near future high-energy and high-luminosity physics experiments, where the time resolution will be essential to disentangle overlapping events and it will also be crucial for Particle IDentification (PID).