Measurement of ionization loss of 50 GeV protons in silicon with smoothly tunable up to 1 cm thickness using a single flat detector

Abstract

Abstract Research of the ionization loss of 50 GeV protons, the path of which in the depleted layer of the silicon detector was smoothly regulated in the range from 0.3 to 10 mm, is presented. In the experiment, we used a flat silicon detector with a fixed thickness of the depleted layer of 300 μm. The smooth regulation of the path was realized due to the variation of the angle between the surface of the detector and the incident proton beam. The comparison of experimental data and theoretical calculations of the ionization loss demonstrates agreement in all range of thicknesses. Results of the research can be used in order to control the angle between the surface of the detector and the incident beam of relativistic particles. Besides, the results can be used in the analysis of data from astrophysical silicon detectors of charged particles if high-energy particles crossed flat detectors at arbitrary angle.