Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection-Reference-Cited by-同舟云学术

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Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection

Published:2020-02-10 Issue:02 Volume:15 Page:C02013-C02013
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Nichetti C.,Steinhartova T.,Antonelli M.,Biasiol G.,Cautero G.,Angelis D. De,Pilotto A.,Driussi F.,Palestri P.,Selmi L.,Arfelli F.,Danailov M.,Menk R.H.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Link

https://iopscience.iop.org/article/10.1088/1748-0221/15/02/C02013/pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Characterization of Separate Absorption–Multiplication GaAs Staircase Avalanche Photodiodes under Continuous Laser Light Reveals Periodic Oscillations at High Gains;Photonics;2023-08-15

2. Synchrotron Radiation Study of Gain, Noise, and Collection Efficiency of GaAs SAM-APDs with Staircase Structure;Sensors;2022-06-17

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