A Silicon Drift Detector-CMOS front-end system for high resolution X-ray spectroscopy up to room temperature-Reference-Cited by-同舟云学术

A Silicon Drift Detector-CMOS front-end system for high resolution X-ray spectroscopy up to room temperature

Published:2015-01-07 Issue:01 Volume:10 Page:P01002-P01002
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Bertuccio G.,Ahangarianabhari M.,Graziani C.,Macera D.,Shi Y.,Rachevski A.,Rashevskaya I.,Vacchi A.,Zampa G.,Zampa N.,Bellutti P.,Giacomini G.,Picciotto A.,Piemonte C.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Link

http://stacks.iop.org/1748-0221/10/i=01/a=P01002/pdf

Reference7 articles.

1. Review of semiconductor drift detectors

2. Enhanced energy range thermoelectrically cooled silicon X-ray detectors

3. Expanding the detection efficiency of silicon drift detectors

4. High rate X-ray spectroscopy with “CUBE” preamplifier coupled with silicon drift detector

5. Progress in ultra-low-noise ASICs for radiation detectors

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