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Charge collection properties of a depleted monolithic active pixel sensor using a HV-SOI process

  • Published:2016-01-25 Issue:01 Volume:11 Page:C01063-C01063
  • ISSN:1748-0221
  • Container-title:Journal of Instrumentation
  • language:
  • Short-container-title:J. Inst.

Author:

Fernandez-Perez S.,Backhaus M.,Fernandez-Garcia M.,Gallrapp C.,Hemperek T.,Kishishita T.,Krueger H.,Moll M.,Padilla C.,Pernegger H.

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-ray characterization of BUSARD chip: A HV-SOI monolithic particle detector with pixel sensors under the buried oxide;Journal of Instrumentation;2021-12-01

2. Characterization of pixel sensor designed in 180 nm SOI CMOS technology;Journal of Instrumentation;2018-01-19

3. Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process;Journal of Instrumentation;2017-10-25

4. Front-end electronics of double SOI X-ray imaging sensors;Journal of Instrumentation;2017-02-02

5. Radiation hard silicon particle detectors for HL-LHC—RD50 status report;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2017-02
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