Abstract
Abstract
The polaron phenomenon is commonly observed in low-dimensional semiconductor materials and is known to have unique effects on conductive material properties. Furthermore, the phonon dragging effect, which leads to the polaron energy level, is less than the electron energy level. A decay magnetic field also affects the polaron effect, which causes polaron energy level changes. We demonstrate the unique electron–phonon coupling properties of this polaron using numerical calculations. Our findings have strong implications for theories of polaron properties and provide compelling evidence for a semiconductor device that industrial manufacturers use for new low-dimensional materials.
Funder
National Natural Science Foundation of China
Scientific Research Projects in Colleges and Universities in Inner Mongolia
Doctor Research Start-up Fund of Inner Mongolia Minzu University
Natural Science Foundation of Inner Mongolia
Subject
Physics and Astronomy (miscellaneous)