Positron Energy Levels in Cd-Based Semiconductors
Author:
Publisher
IOP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://iopscience.iop.org/article/10.1088/0253-6102/59/6/18/pdf
Reference50 articles.
1. ULTRAVIOLET ZnO LASER PUMPED BY AN ELECTRON BEAM
2. Deposition and properties of zinc cadmium telluride films
3. Chapter 3 Structural Transitions in the Group IV, III-V, and II-VI Semiconductors under Pressure
4. CPA band calculation for (Hg, Cd) Te
5. Lattice dynamics of cadmium telluride
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Positron lifetime spectroscopy of defect structures in Cd1–x Zn x Te mixed crystals grown by vertical Bridgman–Stockbarger method;Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials;2021-07-06
2. Positron energy levels in zinc chalcogenides ZnS, ZnSe, and ZnTe;Computational Materials Science;2014-10
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