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Band offsets in transition-metal oxide heterostructures

Published:2013-06-27 Issue:29 Volume:46 Page:295303
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Goldfarb I,Ohlberg D A A,Strachan J P,Pickett M D,Yang J Joshua,Medeiros-Ribeiro G,Williams R S

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/46/i=29/a=295303/pdf

Reference51 articles.

1. Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate

2. Band offsets of wide-band-gap oxides and implications for future electronic devices

3. High dielectric constant oxides

4. Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions

5. Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation

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1. Interface band offset determination of ultra-thin oxides grown on TiO2 and ZnO by x-ray photoelectron spectroscopy;Journal of Physics D: Applied Physics;2021-05-05

2. Impact of lattice defects on water oxidation properties in SnNb2O6 photoanode prepared by pulsed-laser deposition method;Journal of Applied Physics;2019-09-07

3. Direct observation of delithiation as the origin of analog memristance in LixNbO2;APL Materials;2019-07

4. Measurements of the band alignment at coherent α-Ga2O3/Al2O3 heterojunctions;Japanese Journal of Applied Physics;2018-07-12

5. Copper oxide catalyst supported on niobium oxide for CO oxidation at low temperatures;Catalysis Communications;2017-07

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