Atomistic aspects of carrier concentration variation in post-annealed indium tin oxide films-Reference-Cited by-同舟云学术

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Atomistic aspects of carrier concentration variation in post-annealed indium tin oxide films

Published:2015-09-04 Issue:39 Volume:48 Page:395307
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Kim Ji-Woong,Kim Hyegyeong,Lee Min-Young,Lee Doo-Yong,Lee Ji-Sung,Jang Yun Hyeong,Bae Jong-Seong,Lee Jeong-Soo,Park Sungkyun

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/48/i=39/a=395307/pdf

Reference34 articles.

1. Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

2. High-Performance Transparent Conducting Oxide Nanowires

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