Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications-Reference-Cited by-同舟云学术

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Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications

Published:2014-01-20 Issue:6 Volume:47 Page:065309
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Tranchant J,Pellaroque A,Janod E,Angleraud B,Corraze B,Cario L,Besland M-P

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=6/a=065309/pdf

Reference37 articles.

1. Chalcogenide photonics

2. 19·9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

3. Copper indium disulfide solar cell absorbers prepared in a one-step process by reactive magnetron sputtering from copper and indium targets

4. Influence of the preparation conditions on the properties of CuInS2 films deposited by one-stage RF reactive sputtering

5. Preparation and characterization of highly (112)-oriented CuInS2 films deposited by a one-stage RF reactive sputtering process

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4. Metal–insulator transitions in (V1-xCrx)2O3 thin films deposited by reactive direct current magnetron co-sputtering;Thin Solid Films;2016-10

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