Light-induced new memory states in electronic resistive switching of NiO/NSTO junction
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/49/i=4/a=045101/pdf
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1. Resistance switching mode transformation in SrRuO3/Cr-doped SrZrO3/Pt frameworks via a thermally activated Ti out-diffusion process
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3. Interface mediated resistive switching in epitaxial NiO nanostructures
4. Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device
5. Switching characteristics of Cu2O metal-insulator-metal resistive memory
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