Etching of Si(111) by SF6plasma in a triode RF (13.56 MHz) multipolar reactor-Reference-Cited by-同舟云学术

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Etching of Si(111) by SF6plasma in a triode RF (13.56 MHz) multipolar reactor

Published:1993-09-14 Issue:9 Volume:26 Page:1516-1522
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Kessi O,Nencib S

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/26/i=9/a=028/pdf

Reference30 articles.

1. Plasma etching in magnetic multipole microwave discharge

2. Studies on product layers formed during etching of Si in a SF6plasma

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diagnostic and processing in SF6RF remote plasma for silicon etching;Journal of Physics D: Applied Physics;2009-08-19

2. Radio frequency synchronized triode reactor with a multihole cathode for etching of Si;Journal of Physics D: Applied Physics;1996-03-14

3. Removal of Thermally Grown Silicon Dioxide Films Using Water at Elevated Temperature and Pressure;Journal of The Electrochemical Society;1995-11-01

4. Radio‐frequency hollow cathode etching reactor with multipolar confinement;Review of Scientific Instruments;1995-01

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