Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD-Reference-Cited by-同舟云学术

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Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD

Published:2008-07-31 Issue:16 Volume:41 Page:165505
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Pedesseau L,Even J,Bondi A,Guo W,Richard S,Folliot H,Labbe C,Cornet C,Dehaese O,Le Corre A,Durand O,Loualiche S

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/41/i=16/a=165505/pdf

Reference57 articles.

1. Low‐threshold, high quantum efficiency stop‐cleaved InGaAsP semiconductor lasers

2. Effects of carrier‐storage layer of InAs/GaAs short period superlattice on photocurrent in GaAs/GaAlAs multi‐quantum well structure

3. Approach to wetting-layer-assisted lateral coupling ofInAs∕InPquantum dots

4. Stability of the (InAs)1/(GaAs)1monolayer superlattice

5. Stability and electronic properties of InAs/InP strained superlattices

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical Study on Vertically Coupled Stranski-Krastanov (SK) on Sub Monolayer (SML) InAs Quantum Dot Heterostructures Employing Ternary and Quaternary Barrier Materials;IEEE Transactions on Nanotechnology;2023

2. Lattice-Dynamical, Elastic and Thermo-Dynamical Properties of GaAs, InAs, and their Mixed Ga1-xInxAs Alloys;Journal of Electronic Materials;2022-03-14

3. Structural and Optical Characteristics of InAs QDs Stacked on GaAs Substrate by Molecular Beam Epitaxy;Materials Today: Proceedings;2019

4. Elastic properties of AlAs-like and InSb-like strained interfaces in [InAs/AlSb] heterostructures;Applied Physics Letters;2016-07-25

5. A detailed first principle study on the structural, elastic, and electronic properties of indium arsenide (InAs) under induced pressure;Canadian Journal of Physics;2016-03

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