Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/41/i=21/a=215101/pdf
Reference17 articles.
1. Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases
2. On the detectivity of quantum-dot infrared photodetectors
3. Quantum dots-in-a-well infrared photodetectors
4. High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature
5. High detectivity InAs quantum dot infrared photodetectors
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1. Dark current and optical properties in asymmetric GaAs/AlGaAs staircase-like multiquantum well structure;Infrared Physics & Technology;2013-05
2. The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors;Journal of Applied Physics;2012-06-15
3. The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells;Progress in Photovoltaics: Research and Applications;2012-03-14
4. Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors;IEEE Journal of Quantum Electronics;2011-05
5. Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors;Journal of Physics D: Applied Physics;2009-05-07
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