Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO-Reference-Cited by-同舟云学术

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Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO

Published:2014-07-29 Issue:34 Volume:47 Page:342001
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Chan K S,Ton-That C,Vines L,Choi S,Phillips M R,Svensson B G,Jagadish C,Wong-Leung J

Funder

The Research Council of Norway

Australian Research Council

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=34/a=342001/pdf

Reference33 articles.

1. Hydrogen as a Cause of Doping in Zinc Oxide

2. Hydrogen multicentre bonds

3. Passivation of active recombination centers in ZnO by hydrogen doping

4. Possiblep-type doping with group-I elements in ZnO

5. Theory of Li in ZnO: A limitation for Li-basedp-type doping

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