The influence of network rigidity on the electrical switching behaviour of Ge–Te–Si glasses suitable for phase change memory applications
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/40/i=23/a=040/pdf
Reference21 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Towards a universal memory?
3. Low-cost and nanoscale non-volatile memory concept for future silicon chips
4. About the vitreous systems GeTeI and GeTeSi and the influence of microphase separation on the semiconductor behaviour of GeSe glasses
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2. Switching, Raman and morphological studies on Si20Te74Sn6 chalcogenide glass;Materials Today: Proceedings;2022
3. Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering;Scientific Reports;2021-06-03
4. Obtaining glasses in the extremely crystallizing Ge–Sb–Te phase change material;Journal of Non-Crystalline Solids;2021-06
5. Search for a possible flexible-to-rigid transition in models of phase change materials;Physical Review B;2021-04-19
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