The fabrication and characterisation of ion-sensitive field-effect transistors with a silicon dioxide gate
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/19/i=10/a=020/pdf
Reference13 articles.
1. ISFET's using inorganic gate thin films
2. Ion-sensitive field-effect transistors with inorganic gate oxide for pH sensing
3. Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements
4. Development, Operation, and Application of the Ion-Sensitive Field-Effect Transistor as a Tool for Electrophysiology
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