X-ray scattering techniques for assessment of III V wafer bonding-Reference-Cited by-同舟云学术

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X-ray scattering techniques for assessment of III V wafer bonding

Published:2003-04-29 Issue:10A Volume:36 Page:A236-A240
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Hayashi S,Bruno D,Sandhu R,Goorsky M S

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/36/i=10A/a=349/pdf

Reference10 articles.

1. Monolithic HEMT-HBT integration by selective MBE

2. Wafer bonding of silicon wafers covered with various surface layers

3. Spontaneous direct bonding of thick silicon nitride

4. Low temperature Si3N4direct bonding

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature DirectWafer Bonding;Lattice Engineering;2012-11-27

2. Towards a structural characterization of an epoxy based polymer using small-angle x-ray scattering;Journal of Applied Physics;2007-02-15

3. Wafer bonding of (211) Cd0.96Zn0.04Te on (001) silicon;Journal of Electronic Materials;2004-06

4. Thermal conductivity of nanoporous bismuth thin films;Applied Physics Letters;2004-03-15

5. Wafer bonding for III–V on insulator structures;Journal of Electronic Materials;2003-08

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