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A theory of broad-area semiconductor lasers with modal reflectors

Published:1997-04-21 Issue:8 Volume:30 Page:1181-1189
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Szymanski M,Kubica J M,Szczepanski P,Mroziewicz B

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/30/i=8/a=005/pdf

Reference20 articles.

1. High-power monolithic phase-locked arrays of antiguided semiconductor diode lasers

2. High power, nearly diffraction-limited output from a semiconductor laser with an unstable resonator

3. Tilted‐mirror semiconductor lasers

4. Narrow lobe emission of high power broad stripe laser in external resonator cavity

5. Broad‐area tandem semiconductor laser

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance;Semiconductors;2019-02

2. Large area single-mode parity–time-symmetric laser amplifiers;Optics Letters;2012-02-17

3. Single lateral mode mid-infrared laser diode using wavelength-scale modulation of the facet reflectivity;Applied Physics Letters;2012-01-02

4. High power diode lasers;Diode Lasers;2004-10-30

5. Theoretical analysis of broad-area semiconductor lasers with laterally shifted modal reflectors;Optical and Quantum Electronics;2003

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