The characterisation of the donors in GaAs epitaxial films by far-infrared photoconductive techniques-Reference-Cited by-同舟云学术

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The characterisation of the donors in GaAs epitaxial films by far-infrared photoconductive techniques

Published:1978-04-21 Issue:6 Volume:11 Page:945-953
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Cooke R A,Hoult R A,Kirkman R F,Stradling R A

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/11/i=6/a=014/pdf

Reference14 articles.

1. Spectroscopic evidence for the interaction between shallow hydrogenic donors in GaAs, InP and CdTe

2. Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride technique

3. Evidence for a contribution to the extrinsic photoconductive signal by hopping through excited states of the donors in silicon and CdTe

4. Inhomogeneous Line Broadening in Donor Magneto-Optical Spectra

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1. Point defects and amplification in active layers of InGaAs/AlGaAs heterostructures;Physics of the Solid State;2013-10

2. Magneto-Spectroscopy of Semiconductors;Comprehensive Semiconductor Science and Technology;2011

3. Introduction;Graduate Texts in Physics;2010

4. Optical Properties;Graduate Texts in Physics;2010

5. Carrier-wave Rabi flopping on radiatively coupled shallow donor transitions inn-type GaAs;Physical Review B;2008-06-09

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