External electro-optic measuring system with high spatial resolution and high voltage sensitivity by using an electro-optic solid immersion probe
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/34/i=20/a=312/pdf
Reference18 articles.
1. New measurement technique: cw electro‐optic probing of electric fields
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4. 1 THz-bandwidth proper for high-speed devices and integrated circuits
5. Picosecond optical sampling of GaAs integrated circuits
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1. A [111]-Cut Si Hemisphere Two-Photon Response Photodetector;Chinese Physics Letters;2011-11
2. Anisotropy of photocurrent for two-photon absorption photodetector made of hemispherical silicon with $(\overline{1}10)$ plane;Applied Physics B;2008-10-30
3. Physical mechanism of two-photon response in semi-insulating GaAs;Chinese Physics Letters;2008-01
4. Hemispherical semi-insulating GaAs double-frequency absorption photodetector operating at 1.3μm wavelength;Applied Physics Letters;2007-03-05
5. The measurement of the electrical field distribution by external electro-optic measuring system with submicrometre spatial resolution;Optics & Laser Technology;2004-06
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