Electron probe response function and piezo-spectroscopic behaviour of semiconductor materials in presence of highly graded stress fields-Reference-Cited by-同舟云学术

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Electron probe response function and piezo-spectroscopic behaviour of semiconductor materials in presence of highly graded stress fields

Published:2006-11-17 Issue:23 Volume:39 Page:4975-4986
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Pezzotti G,Zhu W,Leto A,Matsutani A,Porporati A A

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/39/i=23/a=012/pdf

Reference29 articles.

1. Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films

2. Stress relief in patterned GaAs grown on mismatched substrates

3. An analytical model of SEM and STEM charge collection images of dislocations in thin semiconductor layers: I. Minority carrier generation, diffusion, and collection

4. In situ study of fracture mechanisms in advanced ceramics using fluorescence and Raman microprobe spectroscopy

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