Thermally activated tunneling in porous silicon nanowires with embedded Si quantum dots-Reference-Cited by-同舟云学术

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Thermally activated tunneling in porous silicon nanowires with embedded Si quantum dots

Published:2016-02-03 Issue:10 Volume:49 Page:105104
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Rezvani S J,Pinto N,Enrico E,D’Ortenzi L,Chiodoni A,Boarino L

Funder

THERMALSKIN

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=10/a=105104/pdf

Reference34 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Silicon Quantum Dots: A General Photocatalyst for Reduction, Decomposition, and Selective Oxidation Reactions

3. Optical gain in silicon nanocrystals

4. A Porous Silicon-Based Optical Interferometric Biosensor

5. Gas sensing properties of single crystalline porous silicon nanowires

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