Electronic properties of a near surface Si -doped GaAs under an applied electric field
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/37/i=19/a=007/pdf
Reference13 articles.
1. Electronic properties of multiple Si δ doping in GaAs
2. Electron energy levels in a δ-doped layer in GaAs
3. Thomas-Fermi theory of δ-doped semiconductor structures: Exact analytical results in the high-density limit
4. On the accuracy of the Thomas-Fermi-Dirac method applied to sub-band structure calculations in a δ-doped semiconductor
5. The self-consistent calculation of Si δ-doped GaAs structures
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