Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range-Reference-Cited by-同舟云学术

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Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range

Published:2016-06-21 Issue:28 Volume:49 Page:285108
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Firsov D D,Komkov O S,Solov’ev V A,Kop’ev P S,Ivanov S V

Funder

Russian Science Foundation

Russian Foundation for Basic Research

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=28/a=285108/pdf

Reference25 articles.

1. Infrared semiconductor lasers for sensing and diagnostics

2. Mid-infrared Semiconductor Optoelectronics

3. Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

4. 3.3–3.4-$\mu{\rm m}$ Diode Lasers Based on Triple-Layer GaInAsSb Quantum Wells

5. High-power continuous-wave midinfrared type-II “W” diode lasers

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