The identification of species evolved in the evaporation of III-V compounds-Reference-Cited by-同舟云学术

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The identification of species evolved in the evaporation of III-V compounds

Published:1974-11-21 Issue:17 Volume:7 Page:2422-2435
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Foxon C T,Joyce B A,Farrow R F C,Griffiths R M

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/7/i=17/a=317/pdf

Reference20 articles.

1. Vapor pressures and phase equilibria in the GaAs system

2. Infrared spectrum of condensed As4 and thermodynamic functions of As4 gas

3. Mass Spectrometric Study of the GaAs System

4. Étude thermodynamique des composés III-V et II-VI par spectrométrie de masse

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1. Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets;Journal of Vacuum Science & Technology B;2023-05-23

2. GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient;Journal of Crystal Growth;2017-04

3. Optical in Situ Study of InP(100) Surface Chemistry: Dissociative Adsorption of Water and Oxygen;The Journal of Physical Chemistry C;2014-08-12

4. GaP Growth on Si(100) and Anti-phase Disorder;GaP Heteroepitaxy on Si(100);2013

5. GaP(100) and InP(100) Surfaces;GaP Heteroepitaxy on Si(100);2013

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